Date

Place

Room H (Room Hall 1, 1F)
P1. Poster Session I
August 20, 2015 (Thursday)
14:00 ~ 15:30

[P1-29]
14:00 ~ 15:30
Title:Large-Area MoS2 Thin Layers Fabricated by Sulfurization with Thermal Cracker
Dae-Hyung Cho, Woo-Jung Lee (ETRI, Korea), Seung Won Shin (Kyung Hee Univ., Korea), Jae-Hyung Wi, Won Seok Han, Sung-Bock Kim (ETRI, Korea), Seong Jun Kang (Kyung Hee Univ., Korea), and Yong-Duck Chung (ETRI, Korea)
Abstract: Due to its unique electronic properties of indirect-to-direct band-gap transition and extremely high mobility, two-dimensional (2D) ultra-thin molybdenum disulfide (MoS2) has been attracting increasing attention for its potentials in various high-performance electronics. However, for practical applications, fabrication of a uniform multi-layered MoS2 layer on a large area substrate has been a challenging issue. In this work, we demonstrate a simple method to form thin MoS2 layers by sulfurizing a Mo film in a vacuum. The sputter-deposited Mo films were sulfurized by reactive sulfur atoms produced from a thermal cracker. The number of layers of MoS2 was controlled by varying the Mo thickness. The Raman spectroscopic and optical transmittance measurements revealed that the MoS2 thin films were successfully formed on SiO2/Si and soda-lime glass substrates. The Raman results of the MoS2 films showed peak-to-peak distances, between the E12g and A1g peak positions, of under 25 cm-1, indicating a successful formation of 2D MoS2. The intensity, FWHM, and position of the Raman peaks demonstrated that the MoS2 film was fabricated very uniformly in centimeter-scale substrates, which were obtained at several different positions. Back-gated transistors were fabricated on these MoS2 films and their electrical properties were characterized.
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