Date

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[P1-2]
14:00 ~ 15:30
Title:In2O3 Overcoating on InP/ZnS Quantum Dots toward Improved Fluorescent Stability
Jung-Ho Jo, Eun-Pyo Jang, and Heesun Yang (Hongik Univ., Korea)
Abstract: For an effort to render quantum dots (QDs) highly stable against photo-excitation, in this work, a novel oxide of n-type wide semiconductor In2O3 is for the first time chosen as a QD encapsulating phase. Red-emitting InP/ZnS QDs are first synthesized and consecutively placed in a simple In2O3 overcoating process. To confirm the presence of In2O3 overlayer, InP/ZnS and InP/ZnS@In2O3 QDs are compared through structural, surface-compositional, and microscopic analyses. Both QDs are identically subjected to a continuous UV irradiation for a long period of time up to 100 h and their temporal PL variations are monitored. A markedly enhanced photostability of InP/ZnS@In2O3 versus InP/ZnS QDs is indeed observed as a result of the effective suppression of photooxidation at InP/ZnS QD surface by In2O3 overlayer. Furthermore, the beneficial effect of In2O3 overcoat is confirmed by packaging InP/ZnS and InP/ZnS@In2O3 QDs with a blue LED and evaluating the device stability of the fabricated QD-LEDs for a continual operational duration of 48 h, showing a much higher QD emission stability from InP/ZnS@In2O3 versus InP/ZnS QDs.
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