Date
Place
- Room H (Room Hall 1, 1F)
- P1. Poster Session I
- August 20, 2015 (Thursday)
- 14:00 ~ 15:30
- [P1-14]
- 14:00 ~ 15:30
- Title:Thermally Stable In-Ga-Zn-O Homojunction Formed by Plasma Treatment with Substrate Bias for Self-Aligned Thin-Film Transistors
- Yusaku Magari, Dapeng Wang, and Mamoru Furuta (Kochi Univ. of Tech., Japan)
Abstract: Recently, self-aligned (SA) structure is actively studied for oxide Thin-Film Transistors (TFTs). There are several reports of IGZO homojunction with highly conductive IGZO regions, which were formed by the selective exposure of Ar, H2, or He plasma. However, it was reported that the performance of SA IGZO TFTs with source/drain (S/D) regions formed by Ar, H2, or He plasma treatment easily degraded after thermal annealing around 200-300 ¡ÆC.?In this study, we present a method to enhance thermal stability of low-resistive In-Ga-Zn-O region by applying a substrate bias during plasma treatment. The SA IGZO TFT was successfully achieved even after post-annealing at 350 ¡ÆC. The TFT without plasma-treatment in S/D regions showed very low on-current, owing to a huge series resistance of the S/D regions. In contract, the TFT with Ar plasma treatment with substrate bias (PB) =100 W exhibited a drastic improvement of the drain current.?
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