Date

Place

[P1-115]
14:00 ~ 15:30
Title:Highly Color Rendering and Luminescent GaN-Based White LEDs with Red InP/ZnS Quantum Dots
Tae Hoon Kim, Young Moon Yu, and Jong Su Kim (Pukyong Nat'l Univ., Korea)
Abstract: For the apllication of solid state lighting, GaN-based white light-emitting diodes (WLEDs) have attracted considerable attention due to their high luminuos efficiency, low power consumption, long reliability, and srong environmental friendliness. In general, the most common WLEDs was fabricated by the combination of a GaN-based blue chip and Ce3+-doped Y3Al5O12(YAG?:Ce) yellow phosphor. However such a combination has a low color rendering index (CRI, Ra < 70) due to its lack of green and red spectral region. To overcome this problem, InP/ZnS quantum dots (QD) are proposed as a promising material for enhancement of high CRI because of their high quantum yield, narrow emission band, and qood photostability.In this study, in order to achieve ultra high CRI (Ra > 90) WLED, we propose a new combination of hybrid phosphor converted WLEDs by adopting YAG: Ce as a yellow phosphor, Ce3+-doped Lu3Al5O12(LuAG:Ce) as a green phosphor, and InP/ZnS quantum dot as a red phosphor, respectively. Furthermore, to improve luminous efficiency, we adopt bilayer structure for phosphor coating on the LED chip as shown in Figure 1.
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