Date
Place
- Room H (Room Hall 1, 1F)
- P1. Poster Session I
- August 20, 2015 (Thursday)
- 14:00 ~ 15:30
- [P1-111]
- 14:00 ~ 15:30
- Title:Selective Area Regrowth for Dual-Color-Emitting LEDs by MOCVD
- Jun-Yeob Lee, Duk-Jo Kong, Chang-Mo Kang, and Dong-Seon Lee (GIST, Korea)
Abstract: In this study, we demonstrated dual-color-emitting LEDs that can control each color emission at same position from an n-p-n LED structure with two MQWs having different wavelengths (blue and green) for high-integration mobile display?by selective area growth (SAG) using metalorganic chemical vapor deposition (MOCVD). We grew a blue LED structure on a green LED epi-structure with a GaN buffer layer by MOCVD. The existence of the GaN buffer layer was found to be a key factor for dual peak emission of the monolithic LED. A study on the GaN buffer layer with various dopings, temperatures, and thicknesses was conducted. As a result, the dual-color-emitting LED with 100 nm of the p-GaN buffer layer showed clear dual peak emissions at same position.
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