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[P1-1]
14:00 ~ 15:30
Title:Enhanced Performance of I-III-VI Type Quantum Dot-Light-Emitting Devices through Introducing Alloyed Oxide Nanoparticle-Based Electron Transport Layer
Chang-Yeol Han, Jong-Hoon Kim, Ki-Heon Lee, Dae-Yeon Jo, and Heesun Yang (Hongik Univ., Korea)
Abstract: Three types of I-III-VI QDs with ternary Cu-In-S (CIS) and quaternary Cu-In-Ga-S (CIGS) and Zn-Cu-In-S (ZCIS) are utilized for the formation of?emitting layer (EML) of solution-processed, multilayer-structured quantum dot-light-emitting diode (QLED). While poly(9-vinlycarbazole) (PVK)? hole transport layer (HTL) is commonly applied in those devices, inorganic electron transport layer (ETL) of a series of colloidal Zn1-xMgxO (x=0, 0.05, 0.1)?nanoparticles (NPs) are unprecedentedly introduced. Increase in band gap of metal oxide NP by MgO alloying produces an upshift of its conduction band minimum (CBM) level, beneficially leading to a closer proximity in energy between CBMs of QD EML and ZnMgO ETL and consequently rendering the electron injection to QD region facilitated. As a result, the device with ZnMgO NP ETL is superior to that of ZnO one with respect to luminance and efficiency. For all I-III-VI QLEDs having CIS, CIGS, and ZCIS QDs, the consistent trend of a strong dependence of device performance on the type of ETL is indeed observed, proving an efficacy of such alloyed ETL in improving the device performance.
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