Date

Place

[59-2]
15:55 ~ 16:10
Title:Highly Flexible Polymer Insulating layers Deposited by Initiated Chemical Vapor Deposition
Hanul Moon, Hyejeong Seong, Sung Gap Im, and Seunghyup Yoo (KAIST, Korea)
Abstract: Polymer insulating layers have been regarded as a potential candidate for insulator components in flexible electronics due to their high flexibility and low process temperature, thus large amount of efforts have been conducted to secure their insulating property while reducing the thickness available for electronic applications. In this respect, poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) films deposited by initiated chemical vapor deposition (iCVD) were recently proposed, and showed an almost ideal insulating property comparable to that of Al2O3 for the thickness of even sub-10nm. The proposed polymer insulating layer and the deposition process are highly advantageous to flexible electronics attributed to the high durability to mechanical strain of up to 4 %, and solvent-free process condition at about room-temperature. The reason for that high mechanical durability can be found in material dynamics that the thickness of the pV3D3 layer remained almost constant with strain, implying that the Possion ratio of the pV3D3 flim is near zero, thus stress is not concentrated in a particularpoint. Flexible organic transistors were also succefully fabricated with pV3D3 gate isulating layers.
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