Date
Place
- Room D (Room 322)
- 57. CIGS Solar Cells
- August 21, 2015 (Friday)
- 15:30 ~ 16:45
- [57-1]
- 15:30 ~ 15:55
- Title:[Invited] Large-Area CuInGaSe2 Solar Cell Efficiency Improvement Using H2-Plasma-Enhanced Process
- Chang-Hong Shen, Tsung-Ta Wu (Nat'l Nano Device Laboratories, Taiwan), and Yu-Lun Chueh (Nat'l Tsing Hua Univ., Taiwan)
Abstract: A progressing non-toxic plasma-enhanced solid Se vapor selenization process (PESVS) technique compared to hydrogen assisted Se vapor selenization (HASVS) to achieve a large-area (40x30 cm2) Cu(In,Ga)Se2 (CIGS) solar panel with enhanced efficiencies from 10.8 % to 13.2 % (14.7 % for active area) was demonstrated. The effects of plasma steps, plasma power and selenization temperature and optimized condition were thoroughly studied in this paper. The remarkable enhancement of the efficiency were ascribed to better crystallinity and enlarged grain size, less Se vacancy formation as well as uniform Ga distribution. These microstructure and compositional change improved fill factor, short circuit current and open circuit voltage, respectively. From reaction kinetics point of view, PESVS provides extra energy to crack Se then help to decrease the reaction activation energy. We believed that this work can provide a facile approach of low temperature selenization for flexible substrate applications or fast selenization for throughput consideration, thus stimulate the mass-production in large scale CIGS PV industry.
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