Date
Place
- Room B (Room 324)
- 56. OLED Device II
- August 21, 2015 (Friday)
- 15:30 ~ 16:55
- [56-5]
- 16:40 ~ 16:55
- Title:Fully Transparent Cathode Using Amorphous Oxide Semiconductors for OLEDs
- Junghwan Kim (Tokyo Inst. of Tech., Japan), Satoru Watanabe (Asahi Glass Co., Ltd., Japan), Nobuhiro Nakamura (Tokyo Inst. of Tech., Japan), Naomichi Miyakawa (Asahi Glass Co., Ltd., Japan), Yoshitake Toda, Toshio Kamiya, and Hideo Hosono (Tokyo Inst. of Tech., Japan)
Abstract: In this work, we report a novel method to use conventional TCOs as cathode using a new transparent amorphous oxide semiconductor (TAOS) and amorphous C12A7 electride (a-C12A7:e-) for OLEDs. The new TAOS has Ohmic contact with conventional TCOs such as ITO or FTO. Furthermore, its high electron mobility (~1cm2/Vs) and tunable carrier concentration can make its conductivity pretty high. Therefore, the series resistance of New TAOS is negligible in the OLEDs comprising high resistive organic layers. And finally, new TAOS and a-C12A7:e- has very good electron injection properties, due to their intrinsically low work function. n summary, a fully transparent cathode electrode was accomplished using a new TAOS and a-C12A7:e- with ITO. This method enables conventional TCOs to be used for both cathode and anode, which would be advantageous for future displays including transparent OLEDs.
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