Date
Place
- Room A (Room 325)
- 41. Advanced TFT Backplane Technologies IV
- August 21, 2015 (Friday)
- 09:00 ~ 10:45
- [41-5]
- 10:30 ~ 10:45
- Title:Analysis of PBTS Instability of Self-Aligned Coplanar InGaZnO Thin Film Transistors
- Dohyung?Lee, Ju Heyuck?Baeck, Taeuk?Park, Saeroonter?Oh, Jong-Uk?Bae, Kwon-Shik?Park, and InByeong?Kang (LG Display Co., Ltd., Korea)
Abstract: Positive ias temperature stress (PBTS) stability is critical in achieving stable display operation, especially in OLED applications. Self-aligned coplanar structures have advactages such as lower parasitic capacitance, and better scalability due to an absence of overlap with source/drain metal regions. The PBTS instability of oxide (IGZO) thin film transistors (TFTs) is correlated with the activation energy for electon trapping (denoted as Etau). In this study, we obtained Etau from the PBTS measurements under various temperatures. We investigate the interface characteristics of the self-aligned coplanar devices by comparing Dit properties obtained via photonic C-V characteristics.
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