Date
Place
- Room A (Room 325)
- 41. Advanced TFT Backplane Technologies IV
- August 21, 2015 (Friday)
- 09:00 ~ 10:45
- [41-2]
- 09:25 ~ 09:50
- Title:[Invited] Bio-Nano Crystallization of Amorphous Si Thin-Film for MEMS Devices
- Shinya Kumagai (Toyota Technological Inst., Japan), Ichiro Yamashita, Yukiharu Uraoka (NAIST, Japan), and Minoru Sasaki (Toyota Technological Inst., Japan)
Abstract: Si thin-films are widely used in micro electromechanical systems (MEMS). Using Si thin-film allows MEMS devices to be integrated with ICs on a same substrate. However, Si thin-films inherently have grain structures, which include defects, such as vacancies, dislocations, and grain boundaries. When a Si thin-film MEMS device is actuated, the energy supplied for actuation is dissipated by the internal friction at the crystalline defects. To reduce the energy loss in the device, the crystalline defects should be decreased. We are developing low-energy-loss MEMS devices using bio-nanotechnology. Here, we present metal-induced lateral crystallization (MILC) of amorphous Si thin-film employing Ni nanoparticles (f7nm) which are biomineralized within apoferritin supramolecules (Bio-Nano Crystallization: BNC). A thin-film cantilever resonator was fabricated to analyze how the crystalline defects affect the resonance characteristics. From the resonance curve, quality factor (Q factor), which is defined by the ratio of stored energy to the dissipated energy per oscillation cycle, was evaluated. The reference resonator fabricated without BNC has small grains and reached Q =12000. In contrast, the resonator fabricated with BNC had well-crystallized large grains and reached Q = 26000. Indeed, two-fold reduction of energy loss was achieved.
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