Date
Place
- Room A (Room 325)
- 41. Advanced TFT Backplane Technologies IV
- August 21, 2015 (Friday)
- 09:00 ~ 10:45
- [41-1]
- 09:00 ~ 09:25
- Title:[Invited] High Driving Ability of Bulk-Accumulation Oxide TFTs for 8k4k Displays
- Jin Jang and Mallory Mativenga (Kyung Hee Univ., Korea)
Abstract: This presentation will review the work we have done so far with bulk-accumulation amorphous-indium-gallium-zinc-oxide (a-IGZO) TFTs, including their design, fabrication and superior performance in comparison to single-gate-driven TFTs of similar dimensions. It will be shown that the fabrication of bulk-accumulation TFTs is fully compatible with standard display fabrication processes, where the metal used to make the pixel electrode is used to make the top-gate. Of particular interest is an offset gate design that results in zero TFT parasitic capacitance (i.e. no overlap between gates and source/drain electrodes) for fast dynamic operation, without limiting the advantages of bulk-accumulation. Compared to single-gate driven TFTs, some of the advantages of bulk-accumulation TFTs include higher on-current, turn-on voltage close to zero volts, smaller subthreshold swing values, better device-to-device uniformity, and better negative bias and light-illumination stress. In the presentation, the speed of the bulk-accumulation TFTs will be verified by fast switching ring oscillators. The presentation will show bulk-accumulation TFT-based gate drivers that are less than 30 micrometer in width (pitch) and have <2 ¥ìm pulse widths, including a prototype high resolution AMOLED display that is diven with bulk-accumulation TFTs and has an integrated bulk-accumulation TFT-based gate-driver.
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