Date
Place
- Room D (Room 322)
- 4. 2D Materials: Synthesis and Manufacturing
- August 19, 2015 (Wednesday)
- 09:00 ~ 10:05
- [4-1]
- 09:00 ~ 09:25
- Title:[Invited] Graphene Transparent Conductive Films Toward Large Area Flexible Devices
- Masataka Hasegawa (AIST, Japan), Ryuichi Kato (TASC, Japan), Yuki Okigawa (AIST, Japan), Satoshi Minami (TASC, Japan), Masatou Ishihara, and Takatoshi Yamada (AIST, Japan)
Abstract: We review the development of synthesis technique of highly-electrically conductive graphene by plasma assisted chemical vapor deposition (CVD). The?problem of the plasma CVD of graphene was the crystal size of 10 nm or smaller, which inhibits the electrical conductivity and limits its Hall mobility to 10?100 cm2/Vs. Ensuring a larger domain size is essential for improving the electrical conductivity of graphene films. Plasma exposure enhances the decomposition of the carbon source gas such as methane and the activation by the catalyst, resulting in a high growth rate of the graphene. If the carbon concentration is high the nucleation density on the metal catalyst is increased, resulting in a smaller domain size. For plasma CVD, the carbon concentration should be much lower than that for thermal CVD. Decreasing the carbon concentration during the graphene synthesis, which is expected to suppress the nucleation density, is one way to expand the size of the graphene crystal and to improve the controllability of a few layers. We developed the synthesis method of graphene by plasma CVD with very low carbon-source concentrations to improve the crystalline quality and the electrical properties of graphene transparent conductive films. We have demonstrated flexible heater by using graphene transparent conductive films.
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