Date

Place

Room F (Room 320)
39. Transparent/Flexible Backplane
August 20, 2015 (Thursday)
15:30 ~ 17:00

[39-4]
16:45 ~ 17:00
Title:Flexible a-IGZO TFT Properties Changed Under Increased Mechanical Stress
Hyun-Jun Jeong, Kyung-Chul Ok, Hyun-Mo Lee, and Jin-Seong Park (Hanyang Univ., Korea)
Abstract: Flexible back-plane device have been recently attracted in the next generation display due to their several advantage such as thin, light and flexibility of panel design compared to conventional glass-based panel. However, the flexible-based panels must need to consider about mechanical stress due to the change of electrical properties under external mechanical stresses. As previous report of flexible a-IGZO, the mechanical stress could also affect to the device performance as well as bias, thermal and illumination stress. In this work, the device performance of conventional a-IGZO TFTs fabricated on the flexible substrate was investigated with respect to different mechanical stresses. The adopted structure of device was top gate/bottom contact and conventional buffer stacked polyimide film was used as substrate. By using the wet etching process of photolithography, a-IGZO TFTs were patterened and total maximum temperature was 250oC in process of sample preparation. In order to evaluate effects of mechanical stress, various bending radius (R=�� to 2mm) were applied on the substrates. The TFT parameters and NBTS instability were systemically analyzed as a function of mechanical bending radius. The density of states (DOS) and contact resistance was investigated to understand origin of degradations of electrical device performance.
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