Date
Place
- Room F (Room 320)
- 39. Transparent/Flexible Backplane
- August 20, 2015 (Thursday)
- 15:30 ~ 17:00
- [39-2]
- 15:55 ~ 16:20
- Title:[Invited] The Low Temperature Oxide TFT Backplanes for Flexible Display
- Chi-Sun Hwang, Min-Ki Ryu, Jae-Eun Pi, OhSang Kwon, Eunsook Park, Sung Haeng Cho (ETRI, Korea), and Sang-Hee Ko Park (KAIST, Korea)
Abstract: High mobility InZnO TFTs were fabricated on PEN substrate. PEALD deposited SiO2 layer was used for protection layer and 1st gate insulator. ALD Al2O3 layer was applied as 2nd (main) gate insulator. In general it is not easy to obtain good quality insulator at low temperature. PEALD method provides good quality SiO2 layer at 250¡É. The deposition conditions of rf-sputtered InZnO layer, such as O2 partial pressure, were also optimized in order to obtain high mobility TFT at low temperature. All the fabrication processes of InZnO TFTs were conducted under 200¡É, which is the maximum temperature for adhesive material located between carrier glass and PEN substrate. The InZnO TFTs were annealed at 250¡É before measurements. The field-effect mobility, turn-on voltage, and subthreshold swing of fabricated InZnO TFTs were 32.5cm2/Vs, -1.75V, and 0.23V/dec, respectively. The hysteresis voltage of the transfer characteristics is as small as 0.5V.
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