Date
Place
- Room F (Room 320)
- 39. Transparent/Flexible Backplane
- August 20, 2015 (Thursday)
- 15:30 ~ 17:00
- [39-1]
- 15:30 ~ 15:55
- Title:[Invited] Oxide Thin Film Transistors for Flexible Devices
- Yukiharu Uraoka, Mami?Fujii, Mutsunori?Uenuma, Masahiro?Horita, and Yasuaki?Ishikawa (NAIST, Japan)
Abstract: Much attention has been gathered to flexible devices which will surely change our life style drastically. In order to realize the flexible devices, oxide thin film is one of the promising material. In this talk, we will introduce several new techniques which are now being developed in our laboratory. We study the fabrication method of high performance oxide thin film transistors by using solution processed InZnO. High mobility and highly reliable TFT was demonstrated using spin coating method. We apply this solution processed InZnO to logic circuit such as invertor or ring oscillators. We could demonstrate clear invertor operation or high frequency circuit operations. We demonstrate ELA on a-IGZO TFTs passivated with a hybrid passivation layer. Irradiating Me 100 samples with 90-110 mJ/cm2 XeCl ELA and Me 60/Ph 40 samples with 80 mJ/cm2 KrF ELA greatly improved the transfer characteristics and mobility. For gate insulator of amorphous InGaZnO thin-film transistor, we fabricated fluorinated silicon nitride (SiN:F) film formed by an inductively-coupled plasma enhanced chemical vapor deposition method by utilizing SiF4/N2 as source gases. Threshold voltage shift against electrical stress was successfully suppressed. Chemical analysis revealed that the hydrogen concentration was reduced to 1/10 of conventional SiN film and fluorine was introduced into the interface between the SiN:F film and channel layer. We conclude that the decrease of hydrogen content and introduction of fluorine lead to decrease of electron trap density at the interface and/or the SiN:F film.
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