Date

Place

Room A (Room 325)
35. Advanced TFT Backplane Technologies III
August 20, 2015 (Thursday)
15:30 ~ 17:15

[35-5]
17:00 ~ 17:15
Title:Novel High-Mobility n-type Small Molecule for Solution-Based Transistors: a Charge Transport Study
Ilja Vladimirov, Jochen Brill, and R. Thomas Weitz (BASF SE, Germany)
Abstract: Over the last decade significant progress has been made in the performance of solution-processed organic semiconductors. With this development, a solution-based mass processing of display backplanes comes closer into reach. P-type solution processed semiconductors have surpassed mobilities of 30 cm��/Vs [1]. Available n-type solution processable materials, indispensable for complementary circuitry, are however not so easily available. Furthermore the mechanism of charge transport in these high-mobility semiconductors is not entirely understood. Here, we show charge transport studies of a novel solution-processable n-channel semiconductor with maximum mobilities of 4.3 cm��/Vs (at a batch average of ��=1.8��0.5 cm��/Vs for 40 devices). Charge transport in the device is investigated via temperature dependent measurements. We find that the more charges are confined to the semiconductor / insulator interface (this can be obtained either by decreasing semiconductor film thickness or via an electric field) the more the mobility drops with increasing temperature above 260K. Our observations are consistent with lattice vibrations or lattice imperfections at the semiconductor/insulator interface dominating the charge transport. ? [1] ???????? H. Minemawari, T. Yamada, H. Matsui, J. Tsutsumi, S. Haas, R. Chiba, R. Kumai, T. Hasegawa, Nature 2011, 475, 364.
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