Date
Place
- Room A (Room 325)
- 35. Advanced TFT Backplane Technologies III
- August 20, 2015 (Thursday)
- 15:30 ~ 17:15
- [35-2]
- 15:55 ~ 16:20
- Title:[Invited] Sustainable Indium-Free Oxide TFTs for Flexible Displays
- Pedro Barquinha, Jorge Martins, Ana Rovisco, Daniela Salgueiro, Asal Kiazadeh, Elvira Fortunato, and Rodrigo Martins (UNINOVA, Portugal)
Abstract: In this presentation zinc-tin oxide (ZTO) will be shown to be a viable replacement to IGZO. Sputtered ZTO TFTs fabricated at UNINOVA present comparable performance to IGZO TFTs after annealing at 300 ¡ÆC (i.e., ¥ìFE?14 cm2/Vs, Von?0 V, S=0.18 V/dec and On/Off ratio>108) and acceptable properties even at 150 ¡ÆC (¥ìFE?5 cm2/Vs, Von?-5 V, S=1.3 V/dec and On/Off ratio>108). Spin-coated ZTO TFTs will also be shown, based on sol-gel and combustion processing routes. ZTO TFTs fabricated at 350 ¡ÆC show excellent idle shelf life stability, with negligible properties variation after 7 months of fabrication. Static characterization shows ¥ìFE?3.5 cm2/Vs, Von=-0.5 V, S=0.3 V/dec and On/Off ratio?107). Extensive gate bias stress analysis was carried out, with ¥ÄVT being well fitted by a stretched exponential equation both in air and vacuum environments. Stress measurements at different temperatures reveal activation energies in the range of 0.6 eV, suggesting that the dielectric surface (rather than the oxide semiconductor itself) controls ¥ÄVT.For both sputtering and solution processing, different analogue and digital building blocks will be shown operating at frequencies in the kHz range, including a 2T1C OLED pixel diving circuit on flexible substrate.
PDF Download
Type
