Date
Place
- Room C (Room 323)
- 3. LEDs and Lighting I
- August 19, 2015 (Wednesday)
- 09:00 ~ 10:30
- [3-3]
- 09:50 ~ 10:15
- Title:[Invited] Towards Highly Efficient Wavelength-Stable Red Light-Emitting Diodes Using Eu-Doped GaN
- Yasufumi Fujiwara (Osaka Univ., Japan)
Abstract: We have developed new properties and functions with rare-earth (RE)-doped III-V semiconductors grown by atomically-controlled organometallic vapor phase epitaxy (OMVPE) to create new devices that make effective use of these properties and functions. Throughout the course of our research, we have focused on europium (Eu) ions that have been widely used as an activator for red phosphor, and have succeeded in growing Eu-doped GaN layers with high crystalline quality by OMVPE, as well as developing the world¡¯s first red LED that operates at room temperature using Eu-doped GaN as the active layer. Since then, we have steadily increased the light output from our red LEDs and at present have achieved a sub-mW output level at an injected current of 20 mA. In the presentation, current understanding of Eu luminescent sites formed in GaN and future strategies for the improved light output of the LEDs will be demonstrated.
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