Date

Place

Room A (Room 325)
29. Advanced TFT Backplane Technologies II
August 20, 2015 (Thursday)
11:00 ~ 12:30

[29-3]
11:50 ~ 12:15
Title:[Invited] Ab Initio Investigation of Source of Instability in Amorphous Semiconducting Oxides
Youngho Kang, Hochul Song, Kanghoon Yim, and Seungwu Han (Seoul Nat'l Univ., Korea)
Abstract: Ultra-definition, large-area displays with three-dimensional visual effects represent megatrend in the current/future display industry. On the hardware level, such a ��dream�� display requires faster pixel switching and higher driving current, which in turn necessitate thin-film transistors (TFTs) with high mobility of 30~50 cm2/V��s. The traditional a-Si TFT performs far below than this requirement and amorphous semiconducting oxides (ASOs) such as In-Ga-Zn-O are poised to enable the high-mobility TFTs. However, the device instabilities under various stress conditions such as voltage, temperature, and light become the main hurdle against the massive commercialization of the AOS-based TFTs. Therefore, the microscopic understanding on the device instability is highly demanded at this moment. In this presentation, I will summarize our recent ab initio calculations on the source of instability in ASO, mainly focusing on the defects and impurities introduced during the thin-film growth. To explain various instability sources, we calculated the absorption spectrum of ASO, the interface between ASO and SiO2, and the oxygen vacancies. In addition, through the combined study with experiments, we investigated the device instability more directly and proposed how to improve the stability.
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