Date

Place

[22-2]
09:25 ~ 09:50
Title:[Invited] High Performance Sputtered High-k CLC LTPS TFTs on Glass Substrate
Akito Hara and Tatsuya Meguro (Tohoku Gakuin Univ., Japan)
Abstract: Recently, low-temperature polycrystalline-silicon (LTPS) thin-film transistors (TFTs) have attracted attention in the development of small, high-resolution mobile displays. To improve the crystalline quality of thin poly-Si films, we have developed a continuous-wave laser lateral crystallization (CLC) technique using a diode-pumped solid-state (DPSS) laser. The high-k gate stack may be a key technology for improving the performance of poly-Si TFTs. Further, sputtering is a standard method employed in display manufacturing. In this paper, we demonstrate the performance of CLC LTPS TFTs with a sputtered Al2O3? and HfO2? gate dielectric. The obtained field-effect mobility of 160 cm2/Vs for the CLC LTPS TFT with sputtered HfO2 is larger than those of previously reported poly-Si TFTs with high-k gate dielectrics, and this is attributed to the high-quality poly-Si film. Moreover, we realized the successful operation of a CMOS inverter with an HfO2 gate stack at Vdd = 2.0 V.
PDF Download

Type