Date
Place
- Room B (Room 324)
- 16. Characterization and Applications of Quantum Dots
- August 19, 2015 (Wednesday)
- 16:00 ~ 17:20
- [16-4]
- 17:05 ~ 17:20
- Title:Cesium Azide - An Efficient Electron Injection Material for Green and Red Quantum Dot Light-Emitting Diodes
- Hoang-Tuan Vu (Nat'l Cheng-Kung Univ., Taiwan), Chun-Yuan Huang (Nat'l Taitung Univ., Taiwan), Chih-Jung Chen, Ray-Kuang Chiang (Far East Univ., Taiwan), Hsin-Chieh Yu, Ying-Chih Chen, and Yan-Kuin Su (Nat'l Cheng-Kung Univ., Taiwan)
Abstract: A novel efficient and air-stable electron injection layer (EIL) of cesium azide (CsN3) was compared with conventional ones (LiF) in type-II quantum dot light-emitting diodes (QLEDs) with both organic electron and hole transport layers. Via directly decomposing to pristine cesium (Cs), the low-temperature evaporated CsN3 provided a better interfacial energy level alignment without damaging the underneath organic layer. Consequently, in comparison to similar devices with LiF, the current efficiencies of 0.276 and 6.33 cd/A have been achieved in the red-emitting and green-emitting QLEDs based on CsN3, which were about 141% (at 1 mA) and 620% (at 0.1 mA) improvement with the maximum luminance exceeding 1020 and 5250 cd/m2, respectively.
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