Date

Place

Room D (Room 322)
11. 2D Materials: Thin Film Devices
August 19, 2015 (Wednesday)
14:00 ~ 15:45

[11-2]
14:25 ~ 14:50
Title:[Invited] Simulation Study of Electrical and Optical Properties of 2D-Material FETs
Demin Yin, Gyuchull Han, and Youngki Yoon (Univ. of Waterloo, Canada)
Abstract: Two-dimensional (2D) semiconductor materials can provide unique and favorable physical properties for the next-generation electronic and optoelectronic device applications. Among transition metal dichalcogenides (TMDCs), molybdenum disulfide (MoS2) has been most extensively explored for field-effect transistor (FET) switching and photonic devices due to its high field-effect mobility (��eff ~700 cm2/V-s) and high photoresponsivity (R ~900 A/W).?Quite recently, a new 2D material of layered black phosphorus (BP?or phosphorene) was also investigated for switching devices. Using self-consistent atomistic quantum transport simulation based on non-equilibrium Green��s function (NEGF) formalism, we investigate various 2D materials such as black phosphorus and TMDCs for FET applications. We discuss comprehensive device characteristics including short-channel effects, subthreshold swing, Ion vs. Ion/Ioff, and the effects of multiple layers for both high-performance and low-power applications. We also show our simulation results for optoelectronic applications where photoconductive (PC) and photovoltaic (PV) effects in 2D materials are discussed in detail. In particular, modeling/simulation of photocurrent is described, and strategies for higher responsivity in 2D material based phototransistors are introduced.
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