Program
Program
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August 19, 2015
August 20, 2015
August 21, 2015
Place
ALL PLACE
Room A (325)
Room B (324)
Room C (323)
Room D (322)
Room E (321)
Room F (320)
Room G (306)
Room H (Hall 1, 1F)
Room D (Room 322)
11. 2D Materials: Thin Film Devices
August 19, 2015 (Wednesday)
14:00 ~ 15:45
[11-1]
14:00 ~ 14:25
Room D (Room 322)
[Invited] High-Performance Graphene Devices for Light Emission, Detection, and Modulation
Young Duck Kim, Yuanda Gao, Sunwoo Lee, and James Hone (Columbia Univ., U.S.A.)
[11-2]
14:25 ~ 14:50
Room D (Room 322)
[Invited] Simulation Study of Electrical and Optical Properties of 2D-Material FETs
Demin Yin, Gyuchull Han, and Youngki Yoon (Univ. of Waterloo, Canada)
[11-3]
14:50 ~ 15:15
Room D (Room 322)
[Invited] Interface Properties of Multilayer MoS2 Thin-Film Transistors
Woong Choi (Kookmin Univ., Korea)
[11-4]
15:15 ~ 15:30
Room D (Room 322)
Highly Stable Hysteresis-Free Molybdenum Disulfide Field-Effect Transistors
Jeongkyun Roh, In-Tak Cho, Hyeonwoo Shin, Byung Hee Hong, Jong-Ho Lee (Seoul Nat'l Univ., Korea), Sung Hun Jin (Incheon Nat'l Univ., Korea), and Changhee Lee (Seoul Nat'l Univ., Korea)
[11-5]
15:30 ~ 15:45
Room D (Room 322)
Optical and Electrical Properties of Organic Light Emitting Diodes with Graphene Bottom Electrodes
Jun-Han Han, Hyunsu Cho, Jin-Wook Shin, Nam Sung Cho, Jaehyun Moon (ETRI, Korea), Young-Duck Kwon, Seungmin Cho (Samsung Techwin Co., Ltd., Korea), and Jeong-Ik Lee (ETRI, Korea)
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